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| STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 m, 160 A, D2PAK, I2PAK STripFETTM III Power MOSFET Features Type STB270N4F3 STI270N4F3 VDSS 40 V 40 V RDS(on) max < 2.0 m < 2.6 m ID PTOT 160 A 330 W 120 A 330 W 3 1 3 12 100% avalanche tested Standard threshold drive DPAK IPAK Applications High current, switching application - Automotive Figure 1. Internal schematic diagram Description This STripFETTM III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. Device summary Marking 270N4F3 270N4F3 Package DPAK IPAK Packaging Tape and reel Tube Order codes STB270N4F3 STI270N4F3 July 2009 Doc ID 13208 Rev 4 1/14 www.st.com 14 Contents STB270N4F3, STI270N4F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/14 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID(1) IDM (2) Absolute maximum ratings Value Parameter IPAK Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 120 120 480 330 2.2 3.5 1 -55 to 175 40 20 160 160 640 DPAK V V A A A W W/C V/n J C Unit PTOT dv/dt(3) EAS(4) TJ Tstg Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD 120 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj=25 C, ID =80 A, VDD= 32 V Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal data Value Parameter IPAK Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose (for 10 sec, 1.6 mm from case) 62.5 300 0.45 35 DPAK C/W C/W C/W C Unit Rthj-a Tl 1. When mounted on 1inch FR-4 board, 2 oz Cu. Doc ID 13208 Rev 4 3/14 Electrical characteristics STB270N4F3, STI270N4F3 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 80 A IPAK DPAK 2 2.1 1.6 100 200 Min. 40 Typ. Max. Unit V 10 A A nA V m m IDSS IGSS VGS(th) RDS(on) 4 2.6 2.0 Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge gate-drain charge Test conditions VDS =15 V, ID = 80 A Min. Typ. Max. Unit 200 7400 1800 47 110 27 25 150 S pF pF pF nC nC nC VDS =25 V, f=1 MHz, VGS=0 - VDD=20 V, ID = 160 A VGS =10 V (see Figure 14) - 1. Pulsed: pulse duration=300s, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD=20 V, ID= 80 A, RG=4.7 , VGS=10 V (see Figure 16) VDD=20 V, ID= 80 A, RG=4.7 , VGS=10 V (see Figure 16) Min. Typ. Max. Unit 22 180 ns ns - Turn-off delay time Fall time 110 45 - ns ns 4/14 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter DPAK Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current IPAK DPAK IPAK ISD=80 A, VGS=0 ISD=160 A, di/dt = 100 A/s, VDD=32 V, Tj=150 C (see Figure 15) Test conditions Min 70 225 3.2 Typ. Max 160 120 640 480 1.5 Unit A A A A V ns nC A ISDM(1) VSD(2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 s, duty cycle 1.5% Doc ID 13208 Rev 4 5/14 Electrical characteristics STB270N4F3, STI270N4F3 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance HV29690 Figure 7. Normalized BVDSS vs temperature RDS(on) (m) IPAK 2.10 2.00 1.90 1.80 1.70 1.60 1.50 1.40 1.30 0 20 40 60 80 DPAK VGS=10V 100 120 140 ID(A) 6/14 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics AM04229v1 VSD (V) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 20 40 60 80 100 120 140 160 180 ISD(A) TJ=175C TJ=-50C TJ=25C Doc ID 13208 Rev 4 7/14 Test circuit STB270N4F3, STI270N4F3 3 Test circuit Figure 14. Gate charge test circuit VDD 12V 2200 Figure 13. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform V(BR)DSS VD Figure 18. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/14 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13208 Rev 4 9/14 Package mechanical data STB270N4F3, STI270N4F3 IPAK (TO-262) mechanical data mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 10/14 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Package mechanical data D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 in c h Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M Doc ID 13208 Rev 4 11/14 Packaging mechanical data STB270N4F3, STI270N4F3 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Revision history 6 Revision history Table 8. Date 07-Feb-2007 02-Apr-2008 06-May-2009 14-Jul-2009 Revision history Revision 1 2 3 4 Initial release. Some value changes onTable 2 Changed: Description and Figure 12: Source-drain diode forward characteristics Removed package and mechanical data: TO-220 Changes Doc ID 13208 Rev 4 13/14 STB270N4F3, STI270N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 13208 Rev 4 |
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